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| @vic AV1959 TO-92 Plastic-Encapsulate Transistors AV1959 TRANSISTOR NPN FEATURES Power dissipation PCM : 0.5 WTamb=25 Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 35 V Operating and storage junction temperature range Tstg: -55 to +150 Tj : 150 TO--92 1. EMITTER 2.COLLECTOR 3.BSAE 1 23 ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(1) DC current gain HFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency VCE(sat) VBE VCE= 6V, IC= 400mA IC= 100mA, IB=10mA VCE=1V, IC=100mA VCE= 6 V, IC= 20mA 200 25 0.25 1.0 V V MHz Test conditions Ic= 100 A IE=0 Ic= 0. 1 mA IB=0 IE= 100 A IC=0 VCB=35 V , IE=0 VEB= 5 V IC=0 VCE=1V, IC=0 70 MIN 35 30 5 TYP MAX UNIT V V V 0.1 0.1 A A 400 fT CLASSIFICATION OF HFE Rank HFE(1) Range HFE(2) O 70-140 25(min) Y 120-240 40(min) GR 200-400 Copyright (c) Avic Electronics Corp. 1 Website: http://www.avictek.com @vic AV1959 Copyright (c) Avic Electronics Corp. 2 Website: http://www.avictek.com @vic AV1959 Copyright (c) Avic Electronics Corp. 3 Website: http://www.avictek.com |
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